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onsemi TIP35AG BJTs

25A 60V NPN BJT Power Transistor TO-247

62,400 ActiveonsemiTO-247$3.67
TIP35AG TO-247 package illustration

Same model may have multiple batches, images only for reference.

TIP35AG
Manufacturer
Part Number (MPN)
TIP35AG
Detailed Description
25A 60V NPN BJT Power Transistor TO-247
Package
TO-247
Lifecycle Status
Active
Datasheet
PDF TIP35AG Datasheet
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Technical Specifications

onsemi TIP35AG BJTs technical specifications.

General

Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
15 @ 15A, 4V
Power Max
125 W
Frequency Transition
3MHz
Transistor Type
NPN
Current Collector IC Max
25 A
Voltage Collector Emitter Breakdown Max
60 V

Alternate Parts Comparison (TIP35AG vs TIP147G vs TIP3055G vs TIP33CG)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-247-3TO-247-3TO-247-3TO-247-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max1mA2mA700µA700µA
Current Collector IC Max25 A10 A15 A10 A
Dc Current Gain Hfe Min IC Vce15 @ 15A, 4V1000 @ 5A, 4V20 @ 4A, 4V20 @ 3A, 4V
Power Max125 W125 W90 W80 W
Transistor TypeNPNPNP - DarlingtonNPNNPN
Vce Saturation Max Ib IC4V @ 5A, 25A3V @ 40mA, 10A3V @ 3.3A, 10A4V @ 2.5A, 10A
Voltage Collector Emitter Breakdown Max60 V100 V60 V100 V
Frequency Transition3MHz--2.5MHz3MHz
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