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onsemi SZ1SMB58AT3G TVS Diodes

58V TVS Diode, 600W Peak Pulse Power, SMB, Unidirectional

10,000 Productiononsemi$0.39
SZ1SMB58AT3G package illustration

Same model may have multiple batches, images only for reference.

SZ1SMB58AT3G
Manufacturer
Part Number (MPN)
SZ1SMB58AT3G
Category
Circuit ProtectionTVS Diodesonsemi SZ1SMB58AT3G
Detailed Description
58V TVS Diode, 600W Peak Pulse Power, SMB, Unidirectional
Lifecycle Status
Production
Datasheet
PDF SZ1SMB58AT3G Datasheet
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Technical Specifications

onsemi SZ1SMB58AT3G TVS Diodes technical specifications.

General

RoHS
Yes
Number of Pins
2
Operating Temperature
-65 ~ 150
Lifecycle Status
Production
Breakdown Voltage Max
71.2
Breakdown Voltage Min
64.4
Clamping Voltage
93.6 V
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Max Reverse Leakage Current
5 µA

Alternate Parts Comparison (SZ1SMB58AT3G vs SZNUD3124LT1G vs SZNUD3112DMT1G vs SZNUD3124DMT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature-65 ~ 150-40°C ~ 125°C (TA)-40°C ~ 85°C (TA)-40°C ~ 125°C (TA)
Lifecycle StatusProductionActiveObsoleteActive
Package / Case--TO-236-3, SC-59, SOT-23-3SC-74, SOT-457SC-74, SOT-457
Mounting Type--Surface MountSurface MountSurface Mount
Supply Voltage--Not Required3.3V ~ 5VNot Required
Interface--On/OffOn/OffOn/Off
Current Output Max--150mA400mA150mA
Grade--AutomotiveAutomotiveAutomotive
Number of Outputs--122
Output Configuration--Low SideLow SideLow Side
Output Type--N-ChannelN-ChannelN-Channel
Qualification--AEC-Q100AEC-Q101AEC-Q100
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