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onsemi SNSS30201MR6T1G BJTs

30 V, 2.0 A NPN Low VCE(sat) Bipolar Junction Transistor, TSOP-6, 3000-REEL

378,000 ActiveonsemiTSOP-6$0.15RoHS
SNSS30201MR6T1G TSOP-6 package illustration

Same model may have multiple batches, images only for reference.

SNSS30201MR6T1G
Manufacturer
Part Number (MPN)
SNSS30201MR6T1G
Detailed Description
30 V, 2.0 A NPN Low VCE(sat) Bipolar Junction Transistor, TSOP-6, 3000-REEL
Package
TSOP-6
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF SNSS30201MR6T1G Datasheet
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Technical Specifications

onsemi SNSS30201MR6T1G BJTs technical specifications.

General

Package / Case
SOT-23-6 Thin, TSOT-23-6
Mounting Type
Surface Mount
Lifecycle Status
Active
Current Collector Cutoff Max
100nA
Dc Current Gain Hfe Min IC Vce
300 @ 500mA, 5V
Power Max
535 mW
Frequency Transition
300MHz
Transistor Type
NPN
Current Collector IC Max
2 A
Voltage Collector Emitter Breakdown Max
30 V

Related Parts Comparison (SNSS30201MR6T1G vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseSOT-23-6 Thin, TSOT-23-66-TSSOP6-TSSOPTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveProductionProductionProduction
Current Collector IC Max2 A200mA100mA100 mA
Dc Current Gain Hfe Min IC Vce300 @ 500mA, 5V100 @ 10mA, 1V420 @ 2mA, 5V420 @ 2mA, 5V
Power Max535 mW150mW380mW300 mW
Transistor TypeNPN2 PNP (Dual)2 NPN (Dual)NPN
Vce Saturation Max Ib IC200mV @ 100mA, 1A400mV @ 5mA, 50mA600mV @ 5mA, 100mA600mV @ 5mA, 100mA
Voltage Collector Emitter Breakdown Max30 V40V45V45 V
Current Collector Cutoff Max100nA--15nA (ICBO)15nA (ICBO)
Operating Temperature---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Number of Pins--663
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