onsemi SMUN5230DW1T1G BJTs
Dual NPN BJT, 50V, 100mA, SOT-363-6
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SMUN5230DW1T1G
Detailed Description
Dual NPN BJT, 50V, 100mA, SOT-363-6
Package
SOT-363-6
Lifecycle Status
Active
Datasheet
SMUN5230DW1T1G Datasheet
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Technical Specifications
onsemi SMUN5230DW1T1G BJTs technical specifications.
General
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Lifecycle Status
Active
Description
TRANS PREBIAS 2NPN 50V SOT-363
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363
Vce Saturation Max Ib IC
250mV @ 5mA, 10mA
Current Collector Cutoff Max
500nA
Power Max
187mW
Grade
Automotive
Transistor Type
2 NPN - Pre-Biased (Dual)
Alternate Parts Comparison (SMUN5230DW1T1G vs SMUN5311DW1T1G vs SMUN2211T1G vs SMUN2213T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -- | -55 °C ~ 150 °C | -- | -- |
| Number of Pins | -- | 6 | -- | -- |
| RoHS | -- | Compliant | -- | -- |
| Lifecycle Status | Active | Active | Active | Active |
| China ROHS | -- | Compliant | -- | -- |
| Collector Emitter Breakdown Voltage | -- | 50 V | -- | -- |
| Collector Emitter Voltage Vceo | -- | 50 V | -- | -- |
| Element Configuration | -- | Dual | -- | -- |
| Export Control Classification Number ECCN Code | -- | EAR99 | -- | -- |
| Halogen Free | -- | Halogen Free | -- | -- |
| Hfe Min | -- | 35 | -- | -- |
| Introduction Date | -- | 1999-01-01 | -- | -- |
| Action |
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SMUN5311DW1T1GonsemiSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon