onsemi PZTA96ST1G BJTs
PNP BJT Transistor, 450V, 500mA, SOT-223-4
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PZTA96ST1G
Detailed Description
PNP BJT Transistor, 450V, 500mA, SOT-223-4
Package
SOT-223-4
Lifecycle Status
Active
Datasheet
PZTA96ST1G Datasheet
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Technical Specifications
onsemi PZTA96ST1G BJTs technical specifications.
General
Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100nA (ICBO)
Dc Current Gain Hfe Min IC Vce
50 @ 10mA, 10V
Power Max
1.5 W
Transistor Type
PNP
Current Collector IC Max
500 mA
Voltage Collector Emitter Breakdown Max
450 V
Alternate Parts Comparison (PZTA96ST1G vs PZTA92T1G vs PZTA42T1G vs MBT3906DW1T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | 4 | -- | 6 |
| RoHS | -- | Compliant | -- | Compliant |
| Lifecycle Status | Active | Active | Active | Active |
| China ROHS | -- | Compliant | -- | Compliant |
| Collector Base Voltage Vcbo | -- | 300 V | -- | 40 V |
| Collector Emitter Breakdown Voltage | -- | 300 V | -- | 40 V |
| Collector Emitter Saturation Voltage | -- | 500 mV | -- | -400 mV |
| Collector Emitter Voltage Vceo | -- | 300 V | -- | 40 V |
| Contact Plating | -- | Tin | -- | Tin |
| Current Rating | -- | -500 mA | -- | -200 mA |
| Element Configuration | -- | Single | -- | Dual |
| Action |
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