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onsemi NVMTS1D2N08H MOSFETs

Single N-Channel Power MOSFET 80V, 337A, 1.1mΩ, 3000-REEL

12 Activeonsemi8-DFNW (8.3x8.4)$10.08
NVMTS1D2N08H - No Image Available

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NVMTS1D2N08H
Manufacturer
Part Number (MPN)
NVMTS1D2N08H
Detailed Description
Single N-Channel Power MOSFET 80V, 337A, 1.1mΩ, 3000-REEL
Package
8-DFNW (8.3x8.4)
Lifecycle Status
Active
Datasheet
PDF NVMTS1D2N08H Datasheet
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Technical Specifications

onsemi NVMTS1D2N08H MOSFETs technical specifications.

General

Package / Case
8-PowerTDFN
Mounting Type
Surface Mount, Wettable Flank
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Gate Charge Qg Max Vgs
147 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
10100 pF @ 40 V
Power Dissipation Max
5W (Ta), 300W (Tc)
Fet Type
N-Channel
Technology
MOSFET (Metal Oxide)

Alternate Parts Comparison (NVMTS1D2N08H vs NVMTS0D7N04CTXG vs NVMTS0D7N06CLTXG vs NVMTS0D6N04CTXG)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-PowerTDFN8-PowerTDFN8-PowerTDFN8-PowerTDFN
Mounting TypeSurface Mount, Wettable FlankSurface Mount, Wettable FlankSurface Mount, Wettable FlankSurface Mount, Wettable Flank
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C43.5A (Ta), 337A (Tc)51A (Ta), 430A (Tc)62.2A (Ta), 477A (Tc)533A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss80 V40 V60 V40 V
Drive Voltage Max Rds on Min Rds on10V10V4.5V, 10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs147 nC @ 10 V140 nC @ 10 V225 nC @ 10 V187 nC @ 10 V
GradeAutomotiveAutomotiveAutomotiveAutomotive
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