onsemi NVMS5P02R2G MOSFETs
Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ Power MOSFET -20V -5.4A 33 mOhm Single P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NVMS5P02R2G
Detailed Description
Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ Power MOSFET -20V -5.4A 33 mOhm Single P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL
Package
8-SOIC
Lifecycle Status
Not For New Designs
Datasheet
NVMS5P02R2G Datasheet
Quick Jump:
Technical Specifications
onsemi NVMS5P02R2G MOSFETs technical specifications.
General
RoHS
Yes
Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Not For New Designs
Gate Charge Qg Max Vgs
35 nC @ 4.5 V
Input Capacitance Ciss Max Vds
1900 pF @ 16 V
Grade
Automotive
Fet Type
P-Channel
Qualification
AEC-Q101
Alternate Parts Comparison (NVMS5P02R2G vs FDS4435A vs FDS4435BZ vs FDS6680A)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 155°C (TJ) | -55°C ~ 155°C (TJ) |
| RoHS | Yes | Yes | Yes | Yes |
| Lifecycle Status | Not For New Designs | Obsolete | Active | Active |
| Configuration | Single | Single | Single | Single |
| Current Continuous Drain ID 25 C | 3.95A (Ta) | 9A (Ta) | 8.8A (Ta) | 12.5A (Ta) |
| Drain to Source Voltage Vdss | 20 V | 30 V | 30 V | 30 V |
| Fet Type | P-Channel | P-Channel | P-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 35 nC @ 4.5 V | 30 nC @ 5 V | 40 nC @ 10 V | 23 nC @ 5 V |
| Input Capacitance Ciss Max Vds | 1900 pF @ 16 V | 2010 pF @ 15 V | 1845 pF @ 15 V | 1620 pF @ 15 V |
| Package | SOIC-8 | 8-SOIC | SOIC-8 | SOIC-8 |
| Action |
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