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onsemi NVMFS5113PLT1G MOSFETs

P-Channel MOSFET, -60V, 64A, 14mΩ, SO8-FL, Logic Level

345 Activeonsemi5-DFN (5x6) (8-SOFL)$3.42
NVMFS5113PLT1G - No Image Available

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NVMFS5113PLT1G
Manufacturer
Part Number (MPN)
NVMFS5113PLT1G
Detailed Description
P-Channel MOSFET, -60V, 64A, 14mΩ, SO8-FL, Logic Level
Package
5-DFN (5x6) (8-SOFL)
Lifecycle Status
Active
Datasheet
PDF NVMFS5113PLT1G Datasheet
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Technical Specifications

onsemi NVMFS5113PLT1G MOSFETs technical specifications.

General

Package / Case
8-PowerTDFN, 5 Leads
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Gate Charge Qg Max Vgs
83 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
4400 pF @ 25 V
Power Dissipation Max
3.8W (Ta), 150W (Tc)
Fet Type
P-Channel
Technology
MOSFET (Metal Oxide)

Alternate Parts Comparison (NVMFS5113PLT1G vs NVMFS5C670NLWFAFT3G vs NVMFS014P04M8LT1G vs NVMFS5C680NLT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-PowerTDFN, 5 Leads8-PowerTDFN, 5 Leads8-PowerTDFN, 5 Leads8-PowerTDFN, 5 Leads
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusActiveNot For New DesignsActiveActive
Current Continuous Drain ID 25 C10A (Ta), 64A (Tc)17A (Ta), 71A (Tc)12.5A (Ta), 52.1A (Tc)8.1A (Ta), 21A (Tc)
Drain to Source Voltage Vdss60 V60 V40 V60 V
Drive Voltage Max Rds on Min Rds on4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Fet TypeP-ChannelN-ChannelP-ChannelN-Channel
Gate Charge Qg Max Vgs83 nC @ 10 V20 nC @ 10 V26.5 nC @ 10 V5.8 nC @ 10 V
GradeAutomotiveAutomotiveAutomotiveAutomotive
Input Capacitance Ciss Max Vds4400 pF @ 25 V1400 pF @ 25 V1734 pF @ 20 V330 pF @ 25 V
Power Dissipation Max3.8W (Ta), 150W (Tc)61W (Tc)3.6W (Ta), 60W (Tc)3.4W (Ta), 24W (Tc)
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