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onsemi NVGS3130NT1G MOSFETs

Single N-Channel Power MOSFET 20V 5.6A 24mΩ, 3000-REEL

90,000 Activeonsemi6-TSOP$0.94
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NVGS3130NT1G
Manufacturer
Part Number (MPN)
NVGS3130NT1G
Detailed Description
Single N-Channel Power MOSFET 20V 5.6A 24mΩ, 3000-REEL
Package
6-TSOP
Lifecycle Status
Active
Datasheet
PDF NVGS3130NT1G Datasheet
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Technical Specifications

onsemi NVGS3130NT1G MOSFETs technical specifications.

General

Package / Case
SOT-23-6 Thin, TSOT-23-6
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Gate Charge Qg Max Vgs
20.3 nC @ 4.5 V
Vgs Max
±8V
Input Capacitance Ciss Max Vds
935 pF @ 16 V
Power Dissipation Max
600mW (Ta)
Fet Type
N-Channel
Technology
MOSFET (Metal Oxide)

Alternate Parts Comparison (NVGS3130NT1G vs NVGS3443T1G vs NVGS5120PT1G vs NVGS4111PT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseSOT-23-6 Thin, TSOT-23-6SOT-23-6 Thin, TSOT-23-6SOT-23-6 Thin, TSOT-23-6SOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveObsoleteActiveActive
Current Continuous Drain ID 25 C4.2A (Ta)3.1A (Ta)1.8A (Ta)3.7A (Ta)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss20 V20 V60 V30 V
Fet TypeN-ChannelP-ChannelP-ChannelP-Channel
Gate Charge Qg Max Vgs20.3 nC @ 4.5 V15 nC @ 4.5 V18.1 nC @ 10 V32 nC @ 10 V
GradeAutomotiveAutomotiveAutomotiveAutomotive
Input Capacitance Ciss Max Vds935 pF @ 16 V565 pF @ 5 V942 pF @ 30 V750 pF @ 15 V
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