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onsemi NVD6416ANLT4G-VF01 MOSFETs

N-Channel Power MOSFET 100V, 19A, 74mΩ Power MOSFET 100V, 19A, 74 mOhm, Single N-Channel, DPAK, Logic Level., 2500-REEL

49onsemiDPAK-3$2.29
NVD6416ANLT4G-VF01 DPAK-3 package illustration

Same model may have multiple batches, images only for reference.

NVD6416ANLT4G-VF01
Manufacturer
Part Number (MPN)
NVD6416ANLT4G-VF01
Detailed Description
N-Channel Power MOSFET 100V, 19A, 74mΩ Power MOSFET 100V, 19A, 74 mOhm, Single N-Channel, DPAK, Logic Level., 2500-REEL
Package
DPAK-3
Lifecycle Status
Not For New Designs
Datasheet
PDF NVD6416ANLT4G-VF01 Datasheet
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Technical Specifications

onsemi NVD6416ANLT4G-VF01 MOSFETs technical specifications.

General

Series
NTD6416ANL
RoHS
Yes
Number of Channels
1 Channel
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Not For New Designs
Gate Charge Qg Max Vgs
40 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
1000 pF @ 25 V

Alternate Parts Comparison (NVD6416ANLT4G-VF01 vs NVD5867NLT4G vs NVD5C454NT4G vs NVD5C460NT4G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusNot For New DesignsObsoleteActiveActive
Current Continuous Drain ID 25 C19A (Tc)6A (Ta), 22A (Tc)19A (Ta), 82A (Tc)18A (Ta), 70A (Tc)
Drain to Source Voltage Vdss100 V60 V40 V40 V
Drive Voltage Max Rds on Min Rds on4.5V, 10V4.5V, 10V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs40 nC @ 10 V15 nC @ 10 V32 nC @ 10 V26 nC @ 10 V
GradeAutomotiveAutomotiveAutomotiveAutomotive
Input Capacitance Ciss Max Vds1000 pF @ 25 V675 pF @ 25 V1900 pF @ 25 V1600 pF @ 25 V
Power Dissipation Max71W (Tc)3.3W (Ta), 43W (Tc)3.1W (Ta), 56W (Tc)3W (Ta), 47W (Tc)
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