onsemi NVD5117PLT4G-VF01 MOSFETs
P-Channel Power MOSFET -60V, -61A, 16mΩ

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NVD5117PLT4G-VF01
Base Model
Detailed Description
P-Channel Power MOSFET -60V, -61A, 16mΩ
Package
DPAK
Lifecycle Status
Not For New Designs
Datasheet
NVD5117PLT4G-VF01 Datasheet
Quick Jump:
Technical Specifications
onsemi NVD5117PLT4G-VF01 MOSFETs technical specifications.
General
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Not For New Designs
Gate Charge Qg Max Vgs
85 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
4800 pF @ 25 V
Power Dissipation Max
4.1W (Ta), 118W (Tc)
Fet Type
P-Channel
Technology
MOSFET (Metal Oxide)
Alternate Parts Comparison (NVD5117PLT4G-VF01 vs NVD5117PLT4G vs NVD5C454NT4G vs NTD24N06LT4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 155°C (TJ) |
| Lifecycle Status | Not For New Designs | Obsolete | Active | Active |
| Current Continuous Drain ID 25 C | 11A (Ta), 61A (Tc) | 11A (Ta), 61A (Tc) | 19A (Ta), 82A (Tc) | 24A (Ta) |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Drain to Source Voltage Vdss | 60 V | 60 V | 40 V | 60 V |
| Drive Voltage Max Rds on Min Rds on | 4.5V, 10V | 4.5V, 10V | 10V | 5V |
| Fet Type | P-Channel | P-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 85 nC @ 10 V | 85 nC @ 10 V | 32 nC @ 10 V | 32 nC @ 5 V |
| Input Capacitance Ciss Max Vds | 4800 pF @ 25 V | 4800 pF @ 25 V | 1900 pF @ 25 V | 1140 pF @ 25 V |
| Action |
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