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onsemi NVD2955T4G MOSFETs

Power MOSFET -60V, -12A, 180 mOhm, Single P-Channel, DPAK.

28onsemiDPAK$1.41
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NVD2955T4G
Manufacturer
Part Number (MPN)
NVD2955T4G
Detailed Description
Power MOSFET -60V, -12A, 180 mOhm, Single P-Channel, DPAK. Power MOSFET -60V -12A 180 mOhm Single P-Channel DPAK, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Package
DPAK
Lifecycle Status
Obsolete
Datasheet
PDF NVD2955T4G Datasheet
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Technical Specifications

onsemi NVD2955T4G MOSFETs technical specifications.

General

Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Obsolete
Gate Charge Qg Max Vgs
30 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
750 pF @ 25 V
Power Dissipation Max
55W (Ta)
Fet Type
P-Channel
Technology
MOSFET (Metal Oxide)

Alternate Parts Comparison (NVD2955T4G vs NVD5C454NT4G vs NVD5C460NT4G vs NTD24N06LT4G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 155°C (TJ)
Lifecycle StatusObsoleteActiveActiveActive
Current Continuous Drain ID 25 C12A (Ta)19A (Ta), 82A (Tc)18A (Ta), 70A (Tc)24A (Ta)
Drain to Source Voltage Vdss60 V40 V40 V60 V
Drive Voltage Max Rds on Min Rds on10V10V10V5V
Fet TypeP-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs30 nC @ 10 V32 nC @ 10 V26 nC @ 10 V32 nC @ 5 V
Input Capacitance Ciss Max Vds750 pF @ 25 V1900 pF @ 25 V1600 pF @ 25 V1140 pF @ 25 V
Power Dissipation Max55W (Ta)3.1W (Ta), 56W (Tc)3W (Ta), 47W (Tc)1.36W (Ta), 62.5W (Tj)
Rds on Max ID Vgs180mOhm @ 6A, 10V4.2mOhm @ 40A, 10V4.9mOhm @ 25A, 10V45mOhm @ 10A, 5V
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