onsemi NTRV4101PT1G MOSFETs
P-Channel JFET, -20V, 3.2A, 70mΩ, SOT-23
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NTRV4101PT1G
Detailed Description
P-Channel JFET, -20V, 3.2A, 70mΩ, SOT-23
Package
SOT-23-3 (TO-236)
Lifecycle Status
Active
Datasheet
NTRV4101PT1G Datasheet
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Technical Specifications
onsemi NTRV4101PT1G MOSFETs technical specifications.
General
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Gate Charge Qg Max Vgs
8.5 nC @ 4.5 V
Vgs Max
±8V
Input Capacitance Ciss Max Vds
675 pF @ 10 V
Power Dissipation Max
420mW (Ta)
Fet Type
P-Channel
Technology
MOSFET (Metal Oxide)
Alternate Parts Comparison (NTRV4101PT1G vs MMBF170LT1G vs MGSF1N03LT1G vs NTR3C21NZT3G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 1.8A (Ta) | 500mA (Ta) | 1.6A (Ta) | 3.6A (Ta) |
| Drain to Source Voltage Vdss | 20 V | 60 V | 30 V | 20 V |
| Drive Voltage Max Rds on Min Rds on | 1.8V, 4.5V | 10V | 4.5V, 10V | 1.8V, 4.5V |
| Fet Type | P-Channel | N-Channel | N-Channel | N-Channel |
| Input Capacitance Ciss Max Vds | 675 pF @ 10 V | 60 pF @ 10 V | 140 pF @ 5 V | 1540 pF @ 16 V |
| Power Dissipation Max | 420mW (Ta) | 225mW (Ta) | 420mW (Ta) | 470mW (Ta) |
| Rds on Max ID Vgs | 85mOhm @ 1.6A, 4.5V | 5Ohm @ 200mA, 10V | 100mOhm @ 1.2A, 10V | 24mOhm @ 5A, 4.5V |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Action |
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