onsemi NTMS4816NR2G MOSFETs
N-Channel Power MOSFET, 30V, 11A, 10mΩ, SOIC-8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NTMS4816NR2G
Detailed Description
N-Channel Power MOSFET, 30V, 11A, 10mΩ, SOIC-8
Package
8-SOIC
Lifecycle Status
Obsolete
Datasheet
NTMS4816NR2G Datasheet
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Technical Specifications
onsemi NTMS4816NR2G MOSFETs technical specifications.
General
Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 155°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
3V @ 250µA
Gate Charge Qg Max Vgs
18.3 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
1060 pF @ 25 V
Fet Type
N-Channel
Power Dissipation Max
780mW (Ta)
Alternate Parts Comparison (NTMS4816NR2G vs NTMS4807NR2G vs NTMS7N03R2G vs NTMS5835NLR2G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 155°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Obsolete | Obsolete | Active | Obsolete |
| Current Continuous Drain ID 25 C | 6.8A (Ta) | 9.1A (Ta) | 4.8A (Ta) | 9.2A (Ta) |
| Drain to Source Voltage Vdss | 30 V | 30 V | 30 V | 40 V |
| Drive Voltage Max Rds on Min Rds on | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 18.3 nC @ 10 V | 24 nC @ 4.5 V | 43 nC @ 10 V | 50 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 1060 pF @ 25 V | 2900 pF @ 24 V | 1190 pF @ 25 V | 2115 pF @ 20 V |
| Power Dissipation Max | 780mW (Ta) | 860mW (Ta) | 800mW (Ta) | 1.5W (Ta) |
| Rds on Max ID Vgs | 10mOhm @ 9A, 10V | 6.1mOhm @ 14.8A, 10V | 23mOhm @ 7A, 10V | 10mOhm @ 10A, 10V |
| Action |
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