onsemi NTD85N02R-1G MOSFETs
MOSFET N-CH 24V 12A IPAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NTD85N02R-1G
Detailed Description
MOSFET N-CH 24V 12A IPAK
Package
IPAK
Lifecycle Status
Obsolete
Datasheet
NTD85N02R-1G Datasheet
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Technical Specifications
onsemi NTD85N02R-1G MOSFETs technical specifications.
General
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
2V @ 250µA
Gate Charge Qg Max Vgs
17.7 nC @ 5 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
2050 pF @ 20 V
Fet Type
N-Channel
Power Dissipation Max
1.25W (Ta), 78.1W (Tc)
Alternate Parts Comparison (NTD85N02R-1G vs NTD3055L170T4G vs NTD360N65S3H vs NTD250N65S3H)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Obsolete | Obsolete | Active | Active |
| Current Continuous Drain ID 25 C | 12A (Ta), 85A (Tc) | 9A (Ta) | 10A (Tc) | 13A (Tc) |
| Description | MOSFET N-CH 24V 12A/85A IPAK | MOSFET N-CH 60V 9A DPAK | POWER MOSFET, N-CHANNEL, SUPERFE | POWER MOSFET, N-CHANNEL, SUPERFE |
| Detailed Description | N-Channel 24 V 12A (Ta), 85A (Tc) 1.25W (Ta), 78.1W (Tc) Through Hole IPAK | N-Channel 60 V 9A (Ta) 1.5W (Ta), 28.5W (Tj) Surface Mount DPAK | N-Channel 650 V 10A (Tc) 83W (Tc) Surface Mount TO-252 (DPAK) | N-Channel 650 V 13A (Tc) 106W (Tc) Surface Mount TO-252 (DPAK) |
| Drain to Source Voltage Vdss | 24 V | 60 V | 650 V | 650 V |
| Drive Voltage Max Rds on Min Rds on | 4.5V, 10V | 5V | 10V | 10V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 17.7 nC @ 5 V | 10 nC @ 5 V | 17.5 nC @ 10 V | 24 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 2050 pF @ 20 V | 275 pF @ 25 V | 916 pF @ 400 V | 1261 pF @ 400 V |
| Action |
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