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onsemi NTD5C632NLT4G MOSFETs

T6 60V LL DPAK

4 ActiveonsemiDPAK$2.95
NTD5C632NLT4G DPAK package illustration

Same model may have multiple batches, images only for reference.

NTD5C632NLT4G
Manufacturer
Part Number (MPN)
NTD5C632NLT4G
Detailed Description
T6 60V LL DPAK
Package
DPAK
Lifecycle Status
Active
Datasheet
PDF NTD5C632NLT4G Datasheet
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Technical Specifications

onsemi NTD5C632NLT4G MOSFETs technical specifications.

General

RoHS
Yes
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
2.1V @ 250µA
Gate Charge Qg Max Vgs
34 nC @ 4.5 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
5700 pF @ 25 V
Fet Type
N-Channel

Alternate Parts Comparison (NTD5C632NLT4G vs NTD24N06LT4G vs NTD14N03RT4G vs NTD20N03L27T4G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 155°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 155°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C29A (Ta), 155A (Tc)24A (Ta)2.5A (Ta)20A (Ta)
Drain to Source Voltage Vdss60 V60 V25 V30 V
Drive Voltage Max Rds on Min Rds on4.5V, 10V5V4.5V, 10V4V, 5V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs34 nC @ 4.5 V32 nC @ 5 V1.8 nC @ 5 V18.9 nC @ 10 V
Input Capacitance Ciss Max Vds5700 pF @ 25 V1140 pF @ 25 V115 pF @ 20 V1260 pF @ 25 V
Power Dissipation Max4W (Ta), 115W (Tc)1.36W (Ta), 62.5W (Tj)1.04W (Ta), 20.8W (Tc)1.75W (Ta), 74W (Tc)
Rds on Max ID Vgs2.5mOhm @ 50A, 10V45mOhm @ 10A, 5V95mOhm @ 5A, 10V27mOhm @ 10A, 5V
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