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onsemi NTD5867NLT4G MOSFETs

N-Ch Power MOSFET, 60V, 20A, 39mΩ, DPAK, Logic Level

7,500onsemiDPAK$0.63RoHS
NTD5867NLT4G DPAK package illustration

Same model may have multiple batches, images only for reference.

NTD5867NLT4G
Manufacturer
Part Number (MPN)
NTD5867NLT4G
Detailed Description
N-Ch Power MOSFET, 60V, 20A, 39mΩ, DPAK, Logic Level
Package
DPAK
Lifecycle Status
Last Shipments
RoHS State
RoHS Compliant
Datasheet
PDF NTD5867NLT4G Datasheet
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Technical Specifications

onsemi NTD5867NLT4G MOSFETs technical specifications.

General

RoHS
Yes
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 155°C (TJ)
Lifecycle Status
Last Shipments
Vgs Th Max ID
2.5V @ 250µA
Gate Charge Qg Max Vgs
15 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
675 pF @ 25 V
Fet Type
N-Channel

Related Parts Comparison (NTD5867NLT4G vs NTD24N06LT4G vs NTD18N06LT4G vs NTD20N03L27T4G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 155°C (TJ)-55°C ~ 155°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 155°C (TJ)
Lifecycle StatusLast ShipmentsActiveActiveActive
Current Continuous Drain ID 25 C20A (Tc)24A (Ta)18A (Ta)20A (Ta)
Drain to Source Voltage Vdss60 V60 V60 V30 V
Drive Voltage Max Rds on Min Rds on4.5V, 10V5V5V4V, 5V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs15 nC @ 10 V32 nC @ 5 V22 nC @ 5 V18.9 nC @ 10 V
Input Capacitance Ciss Max Vds675 pF @ 25 V1140 pF @ 25 V675 pF @ 25 V1260 pF @ 25 V
Power Dissipation Max36W (Tc)1.36W (Ta), 62.5W (Tj)2.1W (Ta), 55W (Tj)1.75W (Ta), 74W (Tc)
Rds on Max ID Vgs39mOhm @ 10A, 10V45mOhm @ 10A, 5V65mOhm @ 9A, 5V27mOhm @ 10A, 5V
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