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onsemi NTD5862NT4G MOSFETs

Single N-Channel Power MOSFET 60V, 98A, 5.7mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL

2,500onsemiDPAK$3.24
NTD5862NT4G - No Image Available

Same model may have multiple batches, images only for reference.

NTD5862NT4G
Manufacturer
Part Number (MPN)
NTD5862NT4G
Detailed Description
Single N-Channel Power MOSFET 60V, 98A, 5.7mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Package
DPAK
Lifecycle Status
Obsolete
Datasheet
PDF NTD5862NT4G Datasheet
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Technical Specifications

onsemi NTD5862NT4G MOSFETs technical specifications.

General

Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
4V @ 250µA
Gate Charge Qg Max Vgs
82 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
6000 pF @ 25 V
Fet Type
N-Channel
Power Dissipation Max
115W (Tc)

Alternate Parts Comparison (NTD5862NT4G vs NTD24N06LT4G vs NTD18N06LT4G vs NTD20N03L27T4G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 155°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 155°C (TJ)
Lifecycle StatusObsoleteActiveActiveActive
Current Continuous Drain ID 25 C98A (Tc)24A (Ta)18A (Ta)20A (Ta)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss60 V60 V60 V30 V
Drive Voltage Max Rds on Min Rds on10V5V5V4V, 5V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs82 nC @ 10 V32 nC @ 5 V22 nC @ 5 V18.9 nC @ 10 V
Input Capacitance Ciss Max Vds6000 pF @ 25 V1140 pF @ 25 V675 pF @ 25 V1260 pF @ 25 V
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