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onsemi NTD110N02RT4G MOSFETs

N-Channel Power MOSFET 24V 110A 4.6mR DPAK SM

100onsemiDPAK$0.32
NTD110N02RT4G DPAK package illustration

Same model may have multiple batches, images only for reference.

NTD110N02RT4G
Manufacturer
Part Number (MPN)
NTD110N02RT4G
Detailed Description
N-Channel Power MOSFET 24V 110A 4.6mR DPAK SM
Package
DPAK
Lifecycle Status
Obsolete
Datasheet
PDF NTD110N02RT4G Datasheet
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Technical Specifications

onsemi NTD110N02RT4G MOSFETs technical specifications.

General

Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
2V @ 250µA
Gate Charge Qg Max Vgs
28 nC @ 4.5 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
3440 pF @ 20 V
Fet Type
N-Channel
Power Dissipation Max
1.5W (Ta), 110W (Tc)

Related Parts Comparison (NTD110N02RT4G vs NTD24N06LT4G vs NTD18N06LT4G vs NTD20N03L27T4G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 155°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 155°C (TJ)
Lifecycle StatusObsoleteActiveActiveActive
Current Continuous Drain ID 25 C12.5A (Ta), 110A (Tc)24A (Ta)18A (Ta)20A (Ta)
Drain to Source Voltage Vdss24 V60 V60 V30 V
Drive Voltage Max Rds on Min Rds on4.5V, 10V5V5V4V, 5V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs28 nC @ 4.5 V32 nC @ 5 V22 nC @ 5 V18.9 nC @ 10 V
Input Capacitance Ciss Max Vds3440 pF @ 20 V1140 pF @ 25 V675 pF @ 25 V1260 pF @ 25 V
Power Dissipation Max1.5W (Ta), 110W (Tc)1.36W (Ta), 62.5W (Tj)2.1W (Ta), 55W (Tj)1.75W (Ta), 74W (Tc)
Rds on Max ID Vgs4.6mOhm @ 20A, 10V45mOhm @ 10A, 5V65mOhm @ 9A, 5V27mOhm @ 10A, 5V
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