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onsemi NTBLS1D1N08H MOSFETs

MOSFET - Power, Single, N-Channel, TOLL, 80 V, 1.05 mΩ?, 351 A, 2000-REEL

5 Activeonsemi8-HPSOF$20.39
NTBLS1D1N08H - No Image Available

Same model may have multiple batches, images only for reference.

NTBLS1D1N08H
Manufacturer
Part Number (MPN)
NTBLS1D1N08H
Detailed Description
MOSFET - Power, Single, N-Channel, TOLL, 80 V, 1.05 mΩ?, 351 A, 2000-REEL
Package
8-HPSOF
Lifecycle Status
Active
Datasheet
PDF NTBLS1D1N08H Datasheet
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Technical Specifications

onsemi NTBLS1D1N08H MOSFETs technical specifications.

General

Package / Case
8-PowerSFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4V @ 650µA
Gate Charge Qg Max Vgs
166 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
11200 pF @ 40 V
Fet Type
N-Channel
Power Dissipation Max
4.2W (Ta), 311W (Tc)

Alternate Parts Comparison (NTBLS1D1N08H vs FDBL9406-F085T6 vs FDBL86561-F085 vs FDBL9403-F085)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-PowerSFN8-PowerSFN8-PowerSFN8-PowerSFN
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusActiveActiveActiveObsolete
Current Continuous Drain ID 25 C41A (Ta), 351A (Tc)45A (Ta), 240A (Tc)300A (Tc)240A (Tc)
Drain to Source Voltage Vdss80 V40 V60 V40 V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs166 nC @ 10 V75 nC @ 10 V220 nC @ 10 V188 nC @ 10 V
Input Capacitance Ciss Max Vds11200 pF @ 40 V4960 pF @ 25 V13650 pF @ 30 V12000 pF @ 25 V
Power Dissipation Max4.2W (Ta), 311W (Tc)4.3W (Ta), 136.4W (Tc)429W (Tj)357W (Tj)
Rds on Max ID Vgs1.05mOhm @ 50A, 10V1.21mOhm @ 50A, 10V1.1mOhm @ 80A, 10V0.9mOhm @ 80A, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
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