onsemi NSVMUN5212DW1T1G BJTs

Name: NSVMUN5212DW1T1G
Brand: onsemi
SKU: NSVMUN5212DW1T1G
Price: 0.0713 USD
Availability: InStock

Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL

756,000 ActiveonsemiSC-88$0.07

Same model may have multiple batches, images only for reference.

NSVMUN5212DW1T1G

Manufacturer

onsemi

Part Number (MPN)

NSVMUN5212DW1T1G

Technical Specifications

onsemi NSVMUN5212DW1T1G BJTs technical specifications.

General

RoHS

Yes

Package / Case

6-TSSOP

Mounting Type

Surface Mount

Lifecycle Status

Active

Vce Saturation Max Ib IC

250mV @ 300µA, 10mA

Current Collector Cutoff Max

500nA

Power Max

250mW

Grade

Automotive

Transistor Type

2 NPN - Pre-Biased (Dual)

Qualification

AEC-Q101

Related Parts Comparison (NSVMUN5212DW1T1G vs NSVMUN5333DW1T1G vs SMBT3946DW1T1G vs MUN5136DW1T1G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

	This Part	Related Part	Related Part	Related Part
	onsemiNSVMUN5212DW1T1G	onsemiNSVMUN5333DW1T1G	onsemiSMBT3946DW1T1G	onsemiMUN5136DW1T1G
Package / Case	6-TSSOP	6-TSSOP	6-TSSOP	6-TSSOP
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Lifecycle Status	Active	Active	Active	Active
Current Collector IC Max	100mA	100mA	200mA	100mA
Dc Current Gain Hfe Min IC Vce	60 @ 5mA, 10V	80 @ 5mA, 10V	100 @ 10mA, 1V	80 @ 5mA, 10V
Power Max	250mW	250mW	150mW	250mW
Transistor Type	2 NPN - Pre-Biased (Dual)	1 NPN, 1 PNP - Pre-Biased (Dual)	1 NPN, 1 PNP	2 PNP - Pre-Biased (Dual)
Vce Saturation Max Ib IC	250mV @ 300µA, 10mA	250mV @ 1mA, 10mA	300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA	250mV @ 300µA, 10mA
Voltage Collector Emitter Breakdown Max	50V	50V	40V	50V
RoHS	Yes	Yes	--	Yes
Current Collector Cutoff Max	500nA	500nA	--	500nA
Grade	Automotive	Automotive	Automotive	--
Action	RFQ	RFQ	RFQ	RFQ

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