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onsemi NSVMMBT5551M3T5G BJTs

High Voltage NPN Bipolar Transistor, 8000-REEL

720,000 ActiveonsemiSOT-723$0.08
NSVMMBT5551M3T5G SOT-723 package illustration

Same model may have multiple batches, images only for reference.

NSVMMBT5551M3T5G
Manufacturer
Part Number (MPN)
NSVMMBT5551M3T5G
Detailed Description
High Voltage NPN Bipolar Transistor, 8000-REEL
Package
SOT-723
Lifecycle Status
Active
Datasheet
PDF NSVMMBT5551M3T5G Datasheet
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Technical Specifications

onsemi NSVMMBT5551M3T5G BJTs technical specifications.

General

RoHS
Yes
Package / Case
SOT-723
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
80 @ 10mA, 5V
Power Max
265 mW
Grade
Automotive
Transistor Type
NPN
Qualification
AEC-Q101

Alternate Parts Comparison (NSVMMBT5551M3T5G vs NS2029M3T5G vs DTC115TM3T5G vs DTA123EM3T5G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseSOT-723SOT-723SOT-723SOT-723
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
RoHSYesYesYesYes
Lifecycle StatusActiveActiveActiveActive
Current Collector IC Max60 mA100 mA100 mA100 mA
Dc Current Gain Hfe Min IC Vce80 @ 10mA, 5V120 @ 1mA, 6V160 @ 5mA, 10V8 @ 5mA, 10V
PackageSOT-723-3SOT-723-3SOT-723-3SOT-723
Power Max265 mW265 mW260 mW260 mW
Transistor TypeNPNPNPNPN - Pre-BiasedPNP - Pre-Biased
Vce Saturation Max Ib IC200mV @ 5mA, 50mA500mV @ 5mA, 50mA250mV @ 5mA, 10mA250mV @ 5mA, 10mA
Voltage Collector Emitter Breakdown Max160 V50 V50 V50 V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)--- 55°C ~ + 150°C
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