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onsemi NSVMMBT5551M3T5G BJTs

High Voltage NPN Bipolar Transistor, 8000-REEL

720,000 ActiveonsemiSOT-723$0.08
NSVMMBT5551M3T5G SOT-723 package illustration

Same model may have multiple batches, images only for reference.

NSVMMBT5551M3T5G
Manufacturer
Part Number (MPN)
NSVMMBT5551M3T5G
Detailed Description
High Voltage NPN Bipolar Transistor, 8000-REEL
Package
SOT-723
Lifecycle Status
Active
Datasheet
PDF NSVMMBT5551M3T5G Datasheet
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Technical Specifications

onsemi NSVMMBT5551M3T5G BJTs technical specifications.

General

RoHS
Yes
Package / Case
SOT-723
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
80 @ 10mA, 5V
Power Max
265 mW
Grade
Automotive
Transistor Type
NPN
Qualification
AEC-Q101

Related Parts Comparison (NSVMMBT5551M3T5G vs NS2029M3T5G vs DTC115TM3T5G vs DTA123EM3T5G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseSOT-723SOT-723SOT-723SOT-723
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
RoHSYesYesYesYes
Lifecycle StatusActiveActiveActiveActive
Current Collector IC Max60 mA100 mA100 mA100 mA
Dc Current Gain Hfe Min IC Vce80 @ 10mA, 5V120 @ 1mA, 6V160 @ 5mA, 10V8 @ 5mA, 10V
PackageSOT-723-3SOT-723-3SOT-723-3SOT-723
Power Max265 mW265 mW260 mW260 mW
Transistor TypeNPNPNPNPN - Pre-BiasedPNP - Pre-Biased
Vce Saturation Max Ib IC200mV @ 5mA, 50mA500mV @ 5mA, 50mA250mV @ 5mA, 10mA250mV @ 5mA, 10mA
Voltage Collector Emitter Breakdown Max160 V50 V50 V50 V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)--- 55°C ~ + 150°C
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