onsemi NSVDTC123EM3T5G BJTs
NPN Bipolar Digital Transistor (BRT), 8000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSVDTC123EM3T5G
Detailed Description
NPN Bipolar Digital Transistor (BRT), 8000-REEL
Package
SOT-723
Lifecycle Status
Active
Datasheet
NSVDTC123EM3T5G Datasheet
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Technical Specifications
onsemi NSVDTC123EM3T5G BJTs technical specifications.
General
Package / Case
SOT-723
Mounting Type
Surface Mount
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
8 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 5mA, 10mA
Current Collector Cutoff Max
500nA
Power Max
260 mW
Transistor Type
NPN - Pre-Biased
Grade
Automotive
Current Collector IC Max
100 mA
Alternate Parts Comparison (NSVDTC123EM3T5G vs NS2029M3T5G vs MMBT2907AM3T5G vs BC856BM3T5G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SOT-723 | SOT-723 | SOT-723 | SOT-723 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 100 mA | 100 mA | 600 mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 8 @ 5mA, 10V | 120 @ 1mA, 6V | 100 @ 150mA, 10V | 220 @ 2mA, 5V |
| Power Max | 260 mW | 265 mW | 265 mW | 265 mW |
| Transistor Type | NPN - Pre-Biased | PNP | PNP | PNP |
| Vce Saturation Max Ib IC | 250mV @ 5mA, 10mA | 500mV @ 5mA, 50mA | 1.6V @ 50mA, 500mA | 650mV @ 5mA, 100mA |
| Voltage Collector Emitter Breakdown Max | 50 V | 50 V | 60 V | 65 V |
| Current Collector Cutoff Max | 500nA | -- | 10nA (ICBO) | 15nA (ICBO) |
| Operating Temperature | -- | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Frequency Transition | -- | 140MHz | 200MHz | 100MHz |
| Action |
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