onsemi NSV40200UW6T1G BJTs
Low VCE(sat) Transistor, PNP, -40 V, 2.0 A, 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSV40200UW6T1G
Detailed Description
Low VCE(sat) Transistor, PNP, -40 V, 2.0 A, 3000-REEL
Package
6-WDFN Exposed Pad
Lifecycle Status
Active
Datasheet
NSV40200UW6T1G Datasheet
Quick Jump:
Technical Specifications
onsemi NSV40200UW6T1G BJTs technical specifications.
General
Package / Case
6-WDFN Exposed Pad
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
150 @ 1A, 2V
Power Max
875 mW
Frequency Transition
140MHz
Transistor Type
PNP
Current Collector IC Max
2 A
Voltage Collector Emitter Breakdown Max
40 V
Alternate Parts Comparison (NSV40200UW6T1G vs NSV45060JDT4G vs NSV45020T1G vs NSV45020AT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 6-WDFN Exposed Pad | TO-252-3, DPak | SOD-123 | SOD-123 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 175°C | -55°C ~ 150°C | -55°C ~ 150°C |
| Accuracy | -- | ±15% | ±15% | ±10% |
| Function | -- | Current Regulator | Current Regulator | Current Regulator |
| Input Voltage | -- | 45V | 45V | 45V |
| Output Current | -- | 100mA | 20mA | 20mA |
| Sensing Method | -- | High/Low-Side | High/Low-Side | High/Low-Side |
| Package | -- | TO-252-3, DPak (2 Leads + Tab), SC-63 | SOD-123 | -- |
| Action |
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