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onsemi NSTB60BDW1T1G BJTs

PNP General Purpose and NPN Bias Resistor Transistor Combination, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL

864,000 ActiveonsemiSC-88$0.06
NSTB60BDW1T1G SC-88 package illustration

Same model may have multiple batches, images only for reference.

NSTB60BDW1T1G
Manufacturer
Part Number (MPN)
NSTB60BDW1T1G
Detailed Description
PNP General Purpose and NPN Bias Resistor Transistor Combination, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
Package
SC-88
Lifecycle Status
Active
Datasheet
PDF NSTB60BDW1T1G Datasheet
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Technical Specifications

onsemi NSTB60BDW1T1G BJTs technical specifications.

General

Series
NSTB60
RoHS
Yes
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Operating Temperature
- 55°C ~ + 150°C
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
80 @ 5mA, 10V / 120 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
Current Collector Cutoff Max
500nA
Frequency Transition
140MHz

Related Parts Comparison (NSTB60BDW1T1G vs NSTB1002DXV5T1G vs NSTB1005DXV5T1G vs MBT3906DW1T1G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSurface MountSMD/SMTSurface MountSurface Mount
RoHSYesYesYesCompliant
PackageSC-88-6SOT-553SOT-553SOT-363-6
Package / Case6-TSSOP--SOT-5536-TSSOP
Operating Temperature- 55°C ~ + 150°C- 55°C ~ + 150°C---55°C ~ 150°C (TJ)
Lifecycle StatusActive--ActiveProduction
Transistor Type1 NPN Pre-Biased, 1 PNP--1 NPN, 1 PNP - Pre-Biased (Dual)2 PNP (Dual)
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