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onsemi NSTB60BDW1T1G BJTs

PNP General Purpose and NPN Bias Resistor Transistor Combination, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL

864,000 ActiveonsemiSC-88$0.06
NSTB60BDW1T1G SC-88 package illustration

Same model may have multiple batches, images only for reference.

NSTB60BDW1T1G
Manufacturer
Part Number (MPN)
NSTB60BDW1T1G
Detailed Description
PNP General Purpose and NPN Bias Resistor Transistor Combination, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
Package
SC-88
Lifecycle Status
Active
Datasheet
PDF NSTB60BDW1T1G Datasheet
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Technical Specifications

onsemi NSTB60BDW1T1G BJTs technical specifications.

General

Series
NSTB60
RoHS
Yes
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Operating Temperature
- 55°C ~ + 150°C
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
80 @ 5mA, 10V / 120 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
Current Collector Cutoff Max
500nA
Frequency Transition
140MHz

Alternate Parts Comparison (NSTB60BDW1T1G vs NSTB1002DXV5T1G vs NSTB1005DXV5T1G vs MBT3906DW1T1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSMD/SMTSurface MountSurface Mount
RoHSYesYesYesCompliant
PackageSC-88-6SOT-553SOT-553SOT-363-6
Package / Case6-TSSOP--SOT-5536-TSSOP
Operating Temperature- 55°C ~ + 150°C- 55°C ~ + 150°C---55°C ~ 150°C (TJ)
Lifecycle StatusActive--ActiveProduction
Transistor Type1 NPN Pre-Biased, 1 PNP--1 NPN, 1 PNP - Pre-Biased (Dual)2 PNP (Dual)
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