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onsemi NSS12100UW3TCG BJTs

Low VCE(sat) Transistor, PNP, 12 V, 1.0 A, 3 Lead WDFN, 2 x 2 x 0.75 mm, 1.3 mm Pitch, 3000-REEL

5 Activeonsemi3-WDFN Exposed Pad$1.08
NSS12100UW3TCG - No Image Available

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NSS12100UW3TCG
Manufacturer
Part Number (MPN)
NSS12100UW3TCG
Detailed Description
Low VCE(sat) Transistor, PNP, 12 V, 1.0 A, 3 Lead WDFN, 2 x 2 x 0.75 mm, 1.3 mm Pitch, 3000-REEL
Package
3-WDFN Exposed Pad
Lifecycle Status
Active
Datasheet
PDF NSS12100UW3TCG Datasheet
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Technical Specifications

onsemi NSS12100UW3TCG BJTs technical specifications.

General

Package / Case
3-WDFN Exposed Pad
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 500mA, 2V
Power Max
740 mW
Frequency Transition
200MHz
Transistor Type
PNP
Current Collector IC Max
1 A
Voltage Collector Emitter Breakdown Max
12 V

Alternate Parts Comparison (NSS12100UW3TCG vs NSS20500UW3TBG vs NSS20500UW3T2G vs NSS20501UW3T2G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case3-WDFN Exposed Pad3-WDFN Exposed Pad3-WDFN Exposed Pad3-WDFN Exposed Pad
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max100nA (ICBO)100nA (ICBO)100nA (ICBO)100nA (ICBO)
Current Collector IC Max1 A5 A5 A5 A
Dc Current Gain Hfe Min IC Vce100 @ 500mA, 2V200 @ 2A, 2V200 @ 2A, 2V200 @ 2A, 2V
DescriptionTRANS PNP 12V 1A 3WDFNTRANS PNP 20V 5A 3WDFNTRANS PNP 20V 5A 3WDFNTRANS NPN 20V 5A 3WDFN
Detailed DescriptionBipolar (BJT) Transistor PNP 12 V 1 A 200MHz 740 mW Surface Mount 3-WDFN (2x2)Bipolar (BJT) Transistor PNP 20 V 5 A 100MHz 875 mW Surface Mount 3-WDFN (2x2)Bipolar (BJT) Transistor PNP 20 V 5 A 100MHz 875 mW Surface Mount 3-WDFN (2x2)Bipolar (BJT) Transistor NPN 20 V 5 A 150MHz 875 mW Surface Mount 3-WDFN (2x2)
Frequency Transition200MHz100MHz100MHz150MHz
Power Max740 mW875 mW875 mW875 mW
Transistor TypePNPPNPPNPNPN
Action

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