onsemi NSBC114EF3T5G BJTs
NPN Bipolar Digital Transistor (BRT), SOT-1123, 1.0x0.6x0.37, 0.35P, 8000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSBC114EF3T5G
Detailed Description
NPN Bipolar Digital Transistor (BRT), SOT-1123, 1.0x0.6x0.37, 0.35P, 8000-REEL
Package
SOT-1123
Lifecycle Status
Active
Datasheet
NSBC114EF3T5G Datasheet
Quick Jump:
Technical Specifications
onsemi NSBC114EF3T5G BJTs technical specifications.
General
RoHS
Yes
Package / Case
SOT-1123
Mounting Type
Surface Mount
Lifecycle Status
Active
Resistor Emitter Base R2
10 kOhms
Dc Current Gain Hfe Min IC Vce
35 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Transistor Type
NPN - Pre-Biased
Power Max
254 mW
Alternate Parts Comparison (NSBC114EF3T5G vs NSBC114YDP6T5G vs NSBC123JPDP6T5G vs NSBC114YPDXV6T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SOT-1123 | SOT-963 | SOT-963 | SOT-563, SOT-666 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 500nA | 500nA | 500nA | 500nA |
| Current Collector IC Max | 100 mA | 100mA | 100mA | 100mA |
| Dc Current Gain Hfe Min IC Vce | 35 @ 5mA, 10V | 80 @ 5mA, 10V | 80 @ 5mA, 10V | 80 @ 5mA, 10V |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Power Max | 254 mW | 339mW | 339mW | 500mW |
| Resistor Base R1 | 10 kOhms | 10kOhms | 2.2kOhms | 10kOhms |
| Resistor Emitter Base R2 | 10 kOhms | 47kOhms | 47kOhms | 47kOhms |
| Transistor Type | NPN - Pre-Biased | 2 NPN - Pre-Biased (Dual) | 2 NPN - Pre-Biased (Dual) | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Action |
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