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onsemi NSBC114EF3T5G BJTs

NPN Bipolar Digital Transistor (BRT), SOT-1123, 1.0x0.6x0.37, 0.35P, 8000-REEL

720,000 ActiveonsemiSOT-1123$0.08
NSBC114EF3T5G SOT-1123 package illustration

Same model may have multiple batches, images only for reference.

NSBC114EF3T5G
Manufacturer
Part Number (MPN)
NSBC114EF3T5G
Detailed Description
NPN Bipolar Digital Transistor (BRT), SOT-1123, 1.0x0.6x0.37, 0.35P, 8000-REEL
Package
SOT-1123
Lifecycle Status
Active
Datasheet
PDF NSBC114EF3T5G Datasheet
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Technical Specifications

onsemi NSBC114EF3T5G BJTs technical specifications.

General

RoHS
Yes
Package / Case
SOT-1123
Mounting Type
Surface Mount
Lifecycle Status
Active
Resistor Emitter Base R2
10 kOhms
Dc Current Gain Hfe Min IC Vce
35 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Transistor Type
NPN - Pre-Biased
Power Max
254 mW

Related Parts Comparison (NSBC114EF3T5G vs NSBC114YDP6T5G vs NSBC123JPDP6T5G vs NSBC114YPDXV6T1G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseSOT-1123SOT-963SOT-963SOT-563, SOT-666
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max500nA500nA500nA500nA
Current Collector IC Max100 mA100mA100mA100mA
Dc Current Gain Hfe Min IC Vce35 @ 5mA, 10V80 @ 5mA, 10V80 @ 5mA, 10V80 @ 5mA, 10V
Power Max254 mW339mW339mW500mW
Resistor Base R110 kOhms10kOhms2.2kOhms10kOhms
Resistor Emitter Base R210 kOhms47kOhms47kOhms47kOhms
Transistor TypeNPN - Pre-Biased2 NPN - Pre-Biased (Dual)2 NPN - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation Max Ib IC250mV @ 300µA, 10mA250mV @ 300µA, 10mA250mV @ 300µA, 10mA250mV @ 300µA, 10mA
Voltage Collector Emitter Breakdown Max50 V50V50V50V
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