onsemi NDSH50120C Rectifier Diodes
DIODE SIL CARB 1.2KV 53A TO247-2
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NDSH50120C
Detailed Description
DIODE SIL CARB 1.2KV 53A TO247-2
Package
TO-247-2
Lifecycle Status
Active
Datasheet
NDSH50120C Datasheet
Quick Jump:
Technical Specifications
onsemi NDSH50120C Rectifier Diodes technical specifications.
General
RoHS
Yes
Package / Case
TO-247-2
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 175°C
Lifecycle Status
Active
Speed
Zero Recovery Time > 500mA (Io)
Reverse Recovery Time Trr
0 ns
Current Reverse Leakage Vr
200 µA @ 1200 V
Capacitance Vr F
3691pF @ 1V, 100kHz
Technology
SiC (Silicon Carbide) Schottky
Alternate Parts Comparison (NDSH50120C vs NDSH25170A vs 1N4148WS)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | |
|---|---|---|---|
| Package / Case | TO-247-2 | TO-247-2 | SC-90, SOD-323F |
| Mounting Type | Through Hole | Through Hole | Surface Mount |
| Lifecycle Status | Active | Active | Production |
| Capacitance Vr F | 3691pF @ 1V, 100kHz | 2025pF @ 1V, 100kHz | 4pF @ 0V, 1MHz |
| Current Average Rectified IO | 53A | 25A | 150mA |
| Current Reverse Leakage Vr | 200 µA @ 1200 V | 40 µA @ 1700 V | 5 µA @ 75 V |
| Operating Temperature Junction | -55°C ~ 175°C | -55°C ~ 175°C | 150°C (Max) |
| Reverse Recovery Time Trr | 0 ns | 0 ns | 4 ns |
| Speed | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) | Small Signal =< 200mA (Io), Any Speed |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | Standard |
| Voltage Dc Reverse Vr Max | 1200 V | 1700 V | 75 V |
| Voltage Forward Vf Max If | 1.75 V @ 50 A | 1.75 V @ 25 A | 1 V @ 10 mA |
| Action |
More Parts in Rectifier Diodes
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
