onsemi NDSH25170A Rectifier Diodes
SiC Schottky Rectifier Diode 1700V 25A TO-247
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NDSH25170A
Detailed Description
SiC Schottky Rectifier Diode 1700V 25A TO-247
Package
TO-247-2
Lifecycle Status
Active
Datasheet
NDSH25170A Datasheet
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Technical Specifications
onsemi NDSH25170A Rectifier Diodes technical specifications.
General
Package / Case
TO-247-2
Mounting Type
Through Hole
Lifecycle Status
Active
Reverse Recovery Time Trr
0 ns
Current Reverse Leakage Vr
40 µA @ 1700 V
Capacitance Vr F
2025pF @ 1V, 100kHz
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
1700 V
Current Average Rectified IO
25A
Operating Temperature Junction
-55°C ~ 175°C
Alternate Parts Comparison (NDSH25170A vs NDSH50120C vs 1N4148WS)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | |
|---|---|---|---|
| Package / Case | TO-247-2 | TO-247-2 | SC-90, SOD-323F |
| Mounting Type | Through Hole | Through Hole | Surface Mount |
| Lifecycle Status | Active | Active | Production |
| Capacitance Vr F | 2025pF @ 1V, 100kHz | 3691pF @ 1V, 100kHz | 4pF @ 0V, 1MHz |
| Current Average Rectified IO | 25A | 53A | 150mA |
| Current Reverse Leakage Vr | 40 µA @ 1700 V | 200 µA @ 1200 V | 5 µA @ 75 V |
| Operating Temperature Junction | -55°C ~ 175°C | -55°C ~ 175°C | 150°C (Max) |
| Reverse Recovery Time Trr | 0 ns | 0 ns | 4 ns |
| Speed | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) | Small Signal =< 200mA (Io), Any Speed |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | Standard |
| Voltage Dc Reverse Vr Max | 1700 V | 1200 V | 75 V |
| Voltage Forward Vf Max If | 1.75 V @ 25 A | 1.75 V @ 50 A | 1 V @ 10 mA |
| Action |
More Parts in Rectifier Diodes
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