onsemi MURB1660CTT4G Rectifier Diodes
16A 600V Ultra-Fast Recovery Rectifier, D2PAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MURB1660CTT4G
Detailed Description
16A 600V Ultra-Fast Recovery Rectifier, D2PAK
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Obsolete
Datasheet
MURB1660CTT4G Datasheet
Quick Jump:
Technical Specifications
onsemi MURB1660CTT4G Rectifier Diodes technical specifications.
General
Series
SWITCHMODE™
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Lifecycle Status
Obsolete
Voltage Forward Vf Max If
1.5 V @ 8 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time Trr
60 ns
Current Reverse Leakage Vr
10 µA @ 600 V
Operating Temperature Junction
-65°C ~ 175°C
Diode Configuration
1 Pair Common Cathode
Alternate Parts Comparison (MURB1660CTT4G vs MURB1660CT vs FFSB10120A-F085 vs MBRB40250TT4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Obsolete | Obsolete | Active | Active |
| Current Reverse Leakage Vr | 10 µA @ 600 V | 10 µA @ 600 V | 200 µA @ 1200 V | 250 µA @ 250 V |
| Operating Temperature Junction | -65°C ~ 175°C | -65°C ~ 175°C | -55°C ~ 175°C | -65°C ~ 150°C |
| Reverse Recovery Time Trr | 60 ns | 60 ns | 0 ns | 35 ns |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Zero Recovery Time > 500mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard | Standard | SiC (Silicon Carbide) Schottky | Schottky |
| Voltage Dc Reverse Vr Max | 600 V | 600 V | 1200 V | 250 V |
| Voltage Forward Vf Max If | 1.5 V @ 8 A | 1.5 V @ 8 A | 1.75 V @ 10 A | 970 mV @ 40 A |
| Action |
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