onsemi MSD42SWT1G BJTs
NPN BJT 300V 150mA 50MHz SC-70 Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MSD42SWT1G
Detailed Description
NPN BJT 300V 150mA 50MHz SC-70 Transistor
Package
SC-70
Lifecycle Status
Active
Datasheet
MSD42SWT1G Datasheet
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Technical Specifications
onsemi MSD42SWT1G BJTs technical specifications.
General
RoHS
Yes
Package / Case
SC-70, SOT-323
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100nA (ICBO)
Dc Current Gain Hfe Min IC Vce
25 @ 1mA, 10V
Power Max
150 mW
Transistor Type
NPN
Current Collector IC Max
150 mA
Alternate Parts Comparison (MSD42SWT1G vs SMUN5114T1G vs SMUN5133T1G vs MUN5136T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SC-70, SOT-323 | SC-70, SOT-323 | SC-70, SOT-323 | SC-70, SOT-323 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 100nA (ICBO) | 500nA | 500nA | 500nA |
| Current Collector IC Max | 150 mA | 100 mA | 100 mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 25 @ 1mA, 10V | 80 @ 5mA, 10V | 80 @ 5mA, 10V | 80 @ 5mA, 10V |
| Power Max | 150 mW | 202 mW | 202 mW | 202 mW |
| Transistor Type | NPN | PNP - Pre-Biased | PNP - Pre-Biased | PNP - Pre-Biased |
| Vce Saturation Max Ib IC | 500mV @ 2mA, 200mA | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA |
| Voltage Collector Emitter Breakdown Max | 300 V | 50 V | 50 V | 50 V |
| Resistor Base R1 | -- | 10 kOhms | 4.7 kOhms | 100 kOhms |
| Resistor Emitter Base R2 | -- | 47 kOhms | 47 kOhms | 100 kOhms |
| Action |
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