onsemi MMBT4401M3T5G BJTs
NPN Bipolar Transistor, SOT-723 3 LEAD, 8000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MMBT4401M3T5G
Detailed Description
NPN Bipolar Transistor, SOT-723 3 LEAD, 8000-REEL
Package
SOT-723
Lifecycle Status
Obsolete
Datasheet
MMBT4401M3T5G Datasheet
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Technical Specifications
onsemi MMBT4401M3T5G BJTs technical specifications.
General
Package / Case
SOT-723
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
100 @ 150mA, 1V
Power Max
265 mW
Frequency Transition
250MHz
Transistor Type
NPN
Current Collector IC Max
600 mA
Voltage Collector Emitter Breakdown Max
40 V
Alternate Parts Comparison (MMBT4401M3T5G vs MMBT2907AM3T5G vs DTA113EM3T5G vs DTA123EM3T5G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SOT-723 | SOT-723 | SOT-723 | SOT-723 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Obsolete | Active | Active | Active |
| Current Collector IC Max | 600 mA | 600 mA | 100 mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 100 @ 150mA, 1V | 100 @ 150mA, 10V | 3 @ 5mA, 10V | 8 @ 5mA, 10V |
| Power Max | 265 mW | 265 mW | 260 mW | 260 mW |
| Transistor Type | NPN | PNP | PNP - Pre-Biased | PNP - Pre-Biased |
| Vce Saturation Max Ib IC | 750mV @ 50mA, 500mA | 1.6V @ 50mA, 500mA | 250mV @ 5mA, 10mA | 250mV @ 5mA, 10mA |
| Voltage Collector Emitter Breakdown Max | 40 V | 60 V | 50 V | 50 V |
| Current Collector Cutoff Max | -- | 10nA (ICBO) | 500nA | 500nA |
| Action |
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