onsemi MMBT2222AWT1G BJTs
NPN BJT Transistor, 40V VCEO, 600mA IC, 300MHz, SC-70
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MMBT2222AWT1G
Base Model
Detailed Description
NPN BJT Transistor, 40V VCEO, 600mA IC, 300MHz, SC-70
Package
SC-70
Lifecycle Status
Active
Datasheet
MMBT2222AWT1G Datasheet
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Technical Specifications
onsemi MMBT2222AWT1G BJTs technical specifications.
General
Package / Case
SC-70, SOT-323
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 150mA, 10V
Power Max
150 mW
Frequency Transition
300MHz
Transistor Type
NPN
Current Collector IC Max
600 mA
Voltage Collector Emitter Breakdown Max
40 V
Alternate Parts Comparison (MMBT2222AWT1G vs MMBT2222AWT3G vs MMBT2222ATT3G vs SMUN5111T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SC-70, SOT-323 | SC-70, SOT-323 | SC-75, SOT-416 | SC-70, SOT-323 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 600 mA | 600 mA | 600 mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 100 @ 150mA, 10V | 100 @ 150mA, 10V | 100 @ 150mA, 10V | 35 @ 5mA, 10V |
| Description | TRANS NPN 40V 0.6A SC70-3 | TRANS NPN 40V 0.6A SC70-3 | TRANS NPN 40V 0.6A SC75 SOT416 | TRANS PREBIAS PNP 50V SC70-3 |
| Detailed Description | Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 150 mW Surface Mount SC-70-3 (SOT323) | Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 150 mW Surface Mount SC-70-3 (SOT323) | Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 150 mW Surface Mount SC-75, SOT-416 | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 202 mW Surface Mount SC-70-3 (SOT323) |
| Power Max | 150 mW | 150 mW | 150 mW | 202 mW |
| Transistor Type | NPN | NPN | NPN | PNP - Pre-Biased |
| Vce Saturation Max Ib IC | 1V @ 50mA, 500mA | 1V @ 50mA, 500mA | 1V @ 50mA, 500mA | 250mV @ 300µA, 10mA |
| Voltage Collector Emitter Breakdown Max | 40 V | 40 V | 40 V | 50 V |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -- |
| Action |
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