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onsemi MJL4281AG BJTs

NPN BJT 350V 15A 230W TO-264 Power Transistor

200 ActiveonsemiTO-264-3, TO-264AA$3.58
MJL4281AG - No Image Available

Same model may have multiple batches, images only for reference.

MJL4281AG
Manufacturer
Part Number (MPN)
MJL4281AG
Detailed Description
NPN BJT 350V 15A 230W TO-264 Power Transistor
Package
TO-264-3, TO-264AA
Lifecycle Status
Active
Datasheet
PDF MJL4281AG Datasheet
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Technical Specifications

onsemi MJL4281AG BJTs technical specifications.

General

Package / Case
TO-264-3, TO-264AA
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
80 @ 5A, 5V
Power Max
230 W
Frequency Transition
35MHz
Transistor Type
NPN
Current Collector IC Max
15 A
Voltage Collector Emitter Breakdown Max
350 V

Alternate Parts Comparison (MJL4281AG vs MJL4302AG vs MJL21193G vs MJL3281AG)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-264-3, TO-264AATO-264-3, TO-264AATO-264-3, TO-264AATO-264-3, TO-264AA
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max100µA100µA100µA50µA (ICBO)
Current Collector IC Max15 A15 A16 A15 A
Dc Current Gain Hfe Min IC Vce80 @ 5A, 5V80 @ 5A, 5V25 @ 8A, 5V75 @ 5A, 5V
Frequency Transition35MHz35MHz4MHz30MHz
Power Max230 W230 W200 W200 W
Transistor TypeNPNPNPPNPNPN
Vce Saturation Max Ib IC1V @ 800mA, 8A1V @ 800mA, 8A4V @ 3.2A, 16A3V @ 1A, 10A
Voltage Collector Emitter Breakdown Max350 V350 V250 V260 V
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