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onsemi MCT5210M BJTs

Transistor Output Optocouplers Phototransistor

300,000 Activeonsemi6-DIP (0.300", 7.62mm)$0.83
MCT5210M - No Image Available

Same model may have multiple batches, images only for reference.

MCT5210M
Manufacturer
Part Number (MPN)
MCT5210M
Detailed Description
Transistor Output Optocouplers Phototransistor
Package
6-DIP (0.300", 7.62mm)
Lifecycle Status
Active
Datasheet
PDF MCT5210M Datasheet
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Technical Specifications

onsemi MCT5210M BJTs technical specifications.

General

Number of Channels
1
Package / Case
6-DIP
Mounting Type
Through Hole
Operating Temperature
-40°C ~ 100°C
Lifecycle Status
Active
Voltage Output Max
30V
Current Output Channel
150mA
Voltage Forward Vf Typ
1.25V
Current Dc Forward If Max
50 mA
Vce Saturation Max
400mV

Alternate Parts Comparison (MCT5210M vs H11F3VM vs TIL111M vs H11G1M)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case6-DIP6-DIP6-DIP6-DIP
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-40°C ~ 100°C-40°C ~ 100°C-40°C ~ 100°C-40°C ~ 100°C
Number of Channels1111
Lifecycle StatusActiveActiveActiveActive
Current Dc Forward If Max50 mA60 mA60 mA60 mA
DescriptionOPTOISO 4.17KV TRANS W/BASE 6DIPOPTOISO 4.17KV 1CH MOSFET 6-DIPOPTOISO 7.5KV TRANS W/BASE 6-DIPOPTOISO 4.17KV DARL W/BASE 6-DIP
Detailed DescriptionOptoisolator Transistor with Base Output 4170Vrms 1 Channel 6-DIPOptoisolator MOSFET Output 4170Vrms 1 Channel 6-DIPOptoisolator Transistor with Base Output 7500Vpk 1 Channel 6-DIPOptoisolator Darlington with Base Output 4170Vrms 1 Channel 6-DIP
Input TypeDCDCDCDC
Output TypeTransistor with BaseMOSFETTransistor with BaseDarlington with Base
Voltage Forward Vf Typ1.25V1.3V1.2V1.3V
Voltage Isolation4170Vrms4170Vrms7500Vpk4170Vrms
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