onsemi FGA40T65SHD BJTs
IGBTs IGBT, 650 V, 40 A Field Stop Trench
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FGA40T65SHD
Detailed Description
IGBTs IGBT, 650 V, 40 A Field Stop Trench
Package
TO-3P-3, SC-65-3
Lifecycle Status
Active
Datasheet
FGA40T65SHD Datasheet
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Technical Specifications
onsemi FGA40T65SHD BJTs technical specifications.
General
Package / Case
TO-3P-3, SC-65-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Input Type
Standard
Gate Charge
72.2 nC
Td on Off 25 C
19.2ns/65.6ns
Test Condition
400V, 40A, 6Ohm, 15V
Igbt Type
Trench Field Stop
Reverse Recovery Time Trr
31.8 ns
Alternate Parts Comparison (FGA40T65SHD vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | 6 | 6 | 3 |
| RoHS | -- | Compliant | Compliant | Compliant |
| Lifecycle Status | Active | Active | Active | Active |
| China ROHS | -- | Compliant | Compliant | Compliant |
| Collector Base Voltage Vcbo | -- | 40 V | 50 V | 50 V |
| Collector Emitter Breakdown Voltage | -- | 40 V | 45 V | 45 V |
| Collector Emitter Saturation Voltage | -- | -400 mV | 600 mV | 600 mV |
| Collector Emitter Voltage Vceo | -- | 40 V | 45 V | 45 V |
| Contact Plating | -- | Tin | Tin | Tin |
| Current Rating | -- | -200 mA | 100 mA | 100 mA |
| Element Configuration | -- | Dual | Dual | Single |
| Action |
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