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onsemi FDPF2D3N10C MOSFETs

MOSFETs PTNG N-CH 100V/120V

80,000 ActiveonsemiTO-220F$6.88
FDPF2D3N10C TO-220F package illustration

Same model may have multiple batches, images only for reference.

FDPF2D3N10C
Manufacturer
Part Number (MPN)
FDPF2D3N10C
Detailed Description
MOSFETs PTNG N-CH 100V/120V
Package
TO-220F
Lifecycle Status
Active
Datasheet
PDF FDPF2D3N10C Datasheet
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Technical Specifications

onsemi FDPF2D3N10C MOSFETs technical specifications.

General

Series
PowerTrench®
Package / Case
TO-220-3 Full Pack
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4V @ 700µA
Gate Charge Qg Max Vgs
152 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
11180 pF @ 50 V
Power Dissipation Max
45W (Tc)

Alternate Parts Comparison (FDPF2D3N10C vs FDPF9N50NZ vs FDPF20N50T vs FDPF18N20FT)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesPowerTrench®--UniFET™UniFET™
Package / CaseTO-220-3 Full Pack--TO-220-3 Full PackTO-220-3 Full Pack
Mounting TypeThrough Hole--Through HoleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActive--ActiveActive
Current Continuous Drain ID 25 C222A (Tc)--20A (Tc)18A (Tc)
Drain to Source Voltage Vdss100 V--500 V200 V
Drive Voltage Max Rds on Min Rds on10V--10V10V
Fet TypeN-Channel--N-ChannelN-Channel
Gate Charge Qg Max Vgs152 nC @ 10 V--59.5 nC @ 10 V26 nC @ 10 V
Input Capacitance Ciss Max Vds11180 pF @ 50 V--3120 pF @ 25 V1180 pF @ 25 V
Power Dissipation Max45W (Tc)--38.5W (Tc)41W (Tc)
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