onsemi FDD86369 MOSFETs
MOSFETs MV7 80/20V 1000A N-chanPwrTrnchMOSFET
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FDD86369
Base Model
Detailed Description
MOSFETs MV7 80/20V 1000A N-chanPwrTrnchMOSFET
Package
TO-252 (DPAK)
Lifecycle Status
Active
Datasheet
FDD86369 Datasheet
Quick Jump:
Technical Specifications
onsemi FDD86369 MOSFETs technical specifications.
General
Series
PowerTrench®
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Gate Charge Qg Max Vgs
54 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
2530 pF @ 40 V
Power Dissipation Max
150W (Tj)
Fet Type
N-Channel
Alternate Parts Comparison (FDD86369 vs FDD86369-F085 vs FDD9510L-F085 vs FDD86367)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Active | Active | Obsolete | Active |
| Current Continuous Drain ID 25 C | 90A (Tc) | 90A (Tc) | 50A (Tc) | 100A (Tc) |
| Description | MOSFET N-CH 80V 90A DPAK | MOSFET N-CH 80V 90A DPAK | MOSFET P-CH 40V 50A DPAK | MOSFET N-CH 80V 100A DPAK |
| Detailed Description | N-Channel 80 V 90A (Tc) 150W (Tj) Surface Mount TO-252 (DPAK) | N-Channel 80 V 90A (Tc) 150W (Tj) Surface Mount TO-252AA | P-Channel 40 V 50A (Tc) 75W (Tj) Surface Mount TO-252 (DPAK) | N-Channel 80 V 100A (Tc) 227W (Tj) Surface Mount TO-252 (DPAK) |
| Drain to Source Voltage Vdss | 80 V | 80 V | 40 V | 80 V |
| Drive Voltage Max Rds on Min Rds on | 10V | 10V | 4.5V, 10V | 10V |
| Fet Type | N-Channel | N-Channel | P-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 54 nC @ 10 V | 54 nC @ 10 V | 37 nC @ 10 V | 88 nC @ 10 V |
| Action |
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