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onsemi FCD850N80Z MOSFETs

MOSFETs N-Channel SuperFET<sup> </sup> II MOSFET

1,583 ActiveonsemiTO-252AA$4.94
FCD850N80Z - No Image Available

Same model may have multiple batches, images only for reference.

FCD850N80Z
Manufacturer
Part Number (MPN)
FCD850N80Z
Detailed Description
MOSFETs N-Channel SuperFET<sup> </sup> II MOSFET
Package
TO-252AA
Lifecycle Status
Active
Datasheet
PDF FCD850N80Z Datasheet
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Technical Specifications

onsemi FCD850N80Z MOSFETs technical specifications.

General

Series
SuperFET® II
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4.5V @ 600µA
Gate Charge Qg Max Vgs
29 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
1315 pF @ 100 V
Power Dissipation Max
75W (Tc)

Alternate Parts Comparison (FCD850N80Z vs FCD260N65S3 vs FCD7N60TM-WS vs MTD3055VL)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusActiveActiveActiveObsolete
Current Continuous Drain ID 25 C6A (Tc)12A (Tc)7A (Tc)12A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss800 V650 V600 V60 V
Drive Voltage Max Rds on Min Rds on10V10V10V5V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs29 nC @ 10 V24 nC @ 10 V30 nC @ 10 V10 nC @ 5 V
Input Capacitance Ciss Max Vds1315 pF @ 100 V1010 pF @ 400 V920 pF @ 25 V570 pF @ 25 V
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