onsemi DTC115EET1G BJTs
NPN BJT Transistor, 50V, 100mA, SOT-416
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DTC115EET1G
Detailed Description
NPN BJT Transistor, 50V, 100mA, SOT-416
Package
SOT-416
Lifecycle Status
Active
Datasheet
DTC115EET1G Datasheet
Quick Jump:
Technical Specifications
onsemi DTC115EET1G BJTs technical specifications.
General
RoHS
Yes
Package / Case
SC-75, SOT-416
Mounting Type
Surface Mount
Lifecycle Status
Active
Resistor Emitter Base R2
100 kOhms
Dc Current Gain Hfe Min IC Vce
80 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Transistor Type
NPN - Pre-Biased
Power Max
200 mW
Alternate Parts Comparison (DTC115EET1G vs DTC143TET1G vs DTC143EM3T5G vs DTC143ZET1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SC-75, SOT-416 | SC-75, SOT-416 | SOT-723 | SC-75, SOT-416 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS | Yes | Yes | Yes | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 500nA | 500nA | 500nA | 500nA |
| Current Collector IC Max | 100 mA | 100 mA | 100 mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 80 @ 5mA, 10V | 160 @ 5mA, 10V | 15 @ 5mA, 10V | 80 @ 5mA, 10V |
| Package | SC-75-3 | SC-75-3 | SOT-723-3 | SC-75,SOT-416 |
| Power Max | 200 mW | 200 mW | 260 mW | 200 mW |
| Resistor Base R1 | 100 kOhms | 4.7 kOhms | 4.7 kOhms | 4.7 kOhms |
| Resistors Included | R1 and R2 | R1 Only | R1 and R2 | R1 and R2 |
| Transistor Type | NPN - Pre-Biased | NPN - Pre-Biased | NPN - Pre-Biased | NPN - Pre-Biased |
| Action |
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