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onsemi DTA113EET1G BJTs

PNP Bipolar Digital Transistor (BRT), SC-75 (SOT-416) 3 LEAD, 3000-REEL

1,296,000 ActiveonsemiSC-75$0.04
DTA113EET1G - No Image Available

Same model may have multiple batches, images only for reference.

DTA113EET1G
Manufacturer
Part Number (MPN)
DTA113EET1G
Detailed Description
PNP Bipolar Digital Transistor (BRT), SC-75 (SOT-416) 3 LEAD, 3000-REEL
Package
SC-75
Lifecycle Status
Active
Datasheet
PDF DTA113EET1G Datasheet
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Technical Specifications

onsemi DTA113EET1G BJTs technical specifications.

General

Package / Case
SC-75, SOT-416
Mounting Type
Surface Mount
Lifecycle Status
Active
Resistor Emitter Base R2
1 kOhms
Dc Current Gain Hfe Min IC Vce
3 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 5mA, 10mA
Current Collector Cutoff Max
500nA
Transistor Type
PNP - Pre-Biased
Power Max
200 mW
Current Collector IC Max
100 mA

Alternate Parts Comparison (DTA113EET1G vs DTA123EET1G vs DTA123TET1G vs DTA143TET1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseSC-75, SOT-416--SC-75, SOT-416SC-75, SOT-416
Mounting TypeSurface Mount--Surface MountSurface Mount
Lifecycle StatusActive--ActiveActive
Current Collector Cutoff Max500nA--500nA500nA
Current Collector IC Max100 mA--100 mA100 mA
Dc Current Gain Hfe Min IC Vce3 @ 5mA, 10V--160 @ 5mA, 10V160 @ 5mA, 10V
DescriptionTRANS PREBIAS PNP 50V 0.1A SC75--TRANS PREBIAS PNP 50V 0.1A SC75TRANS PREBIAS PNP 50V 0.1A SC75
Detailed DescriptionPre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 mW Surface Mount SC-75, SOT-416--Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 mW Surface Mount SC-75, SOT-416Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 mW Surface Mount SC-75, SOT-416
Power Max200 mW--200 mW200 mW
Resistor Base R11 kOhms--2.2 kOhms4.7 kOhms
Resistors IncludedR1 and R2--R1 OnlyR1 Only
Transistor TypePNP - Pre-Biased--PNP - Pre-BiasedPNP - Pre-Biased
Action

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