onsemi BC807-25WT1G BJTs
PNP BJT Transistor, 45V VCEO, 500mA IC, 100MHz, SC-70
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BC807-25WT1G
Base Model
Detailed Description
PNP BJT Transistor, 45V VCEO, 500mA IC, 100MHz, SC-70
Package
SC-70, SOT-323
Lifecycle Status
Active
Datasheet
BC807-25WT1G Datasheet
Quick Jump:
Technical Specifications
onsemi BC807-25WT1G BJTs technical specifications.
General
Package / Case
SC-70, SOT-323
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
160 @ 100mA, 1V
Power Max
460 mW
Frequency Transition
100MHz
Transistor Type
PNP
Current Collector IC Max
500 mA
Voltage Collector Emitter Breakdown Max
45 V
Alternate Parts Comparison (BC807-25WT1G vs BC807-16LT1G vs BC807-25LT3G vs BC807-40WT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | 3 | -- | -- |
| RoHS | -- | Compliant | -- | -- |
| Lifecycle Status | Active | Active | Active | Active |
| China ROHS | -- | Compliant | -- | -- |
| Collector Base Voltage Vcbo | -- | 50 V | -- | -- |
| Collector Emitter Breakdown Voltage | -- | 45 V | -- | -- |
| Collector Emitter Saturation Voltage | -- | 700 mV | -- | -- |
| Collector Emitter Voltage Vceo | -- | 45 V | -- | -- |
| Contact Plating | -- | Tin | -- | -- |
| Element Configuration | -- | Single | -- | -- |
| Emitter Base Voltage Vebo | -- | 5 V | -- | -- |
| Action |
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