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onsemi 2SD1628G-TD-E BJTs

Bipolar Transistor, 20V, 5A, Low VCE(sat), NPN Single PCP hFE 280-560, SOT-89 / PCP-1, 1000-REEL

126,000 ActiveonsemiSOT-89$0.46
2SD1628G-TD-E - No Image Available

Same model may have multiple batches, images only for reference.

2SD1628G-TD-E
Manufacturer
Part Number (MPN)
2SD1628G-TD-E
Detailed Description
Bipolar Transistor, 20V, 5A, Low VCE(sat), NPN Single PCP hFE 280-560, SOT-89 / PCP-1, 1000-REEL
Package
SOT-89
Lifecycle Status
Active
Datasheet
PDF 2SD1628G-TD-E Datasheet
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Technical Specifications

onsemi 2SD1628G-TD-E BJTs technical specifications.

General

Package / Case
TO-243AA
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
120 @ 500mA, 2V
Power Max
500 mW
Frequency Transition
120MHz
Transistor Type
NPN
Current Collector IC Max
5 A
Voltage Collector Emitter Breakdown Max
20 V

Alternate Parts Comparison (2SD1628G-TD-E vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Number of Pins--663
RoHS--CompliantCompliantCompliant
Lifecycle StatusActiveActiveActiveActive
China ROHS--CompliantCompliantCompliant
Collector Base Voltage Vcbo--40 V50 V50 V
Collector Emitter Breakdown Voltage--40 V45 V45 V
Collector Emitter Saturation Voltage---400 mV600 mV600 mV
Collector Emitter Voltage Vceo--40 V45 V45 V
Contact Plating--TinTinTin
Current Rating---200 mA100 mA100 mA
Element Configuration--DualDualSingle
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