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NXP Semiconductors PDTA123EU,115 BJTs

Trans Digital BJT PNP 50V 100mA 200mW 3-Pin SC-70 T/R

50 ActiveNXP SemiconductorsSOT-323-3$0.76
PDTA123EU,115 SOT-323-3 package illustration

Same model may have multiple batches, images only for reference.

PDTA123EU,115
Manufacturer
Part Number (MPN)
PDTA123EU,115
Detailed Description
Trans Digital BJT PNP 50V 100mA 200mW 3-Pin SC-70 T/R
Package
SOT-323-3
Lifecycle Status
Active
Datasheet
PDF PDTA123EU,115 Datasheet
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Technical Specifications

NXP Semiconductors PDTA123EU,115 BJTs technical specifications.

General

RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 65°C ~ + 150°C
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
2.2 kOhms
Typical Resistor Ratio
1
Collector Emitter Voltage Vceo Max
50 V
Continuous Collector Current
100 mA
Peak Dc Collector Current
100 mA

Related Parts Comparison (PDTA123EU,115 vs PDTA143ZU,115 vs PDTA143XU,115 vs PDTA123JU,115)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesYesYesYes
PackageSOT-323-3SOT-323-3SOT-323-3SOT-323-3
Channel Type--PNPPNPPNP
Chemical Content--PDTA143ZUPDTA143XUPDTA123JU
Packing--SOT323_115SOT323_115SOT323_115
Ptot Mw--200200200
R1 Typ K--4.74.72.2
R2 Typ K--471047
Size Mm--2 x 1.25 x 0.952 x 1.25 x 0.952 x 1.25 x 0.95
Type Number--PDTA143ZUPDTA143XUPDTA123JU
Vceo V--505050
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