NXP Semiconductors BFU768F115 RF BJT
NPN WIDEBAND SILICON GERMANIUM R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BFU768F115
Detailed Description
NPN WIDEBAND SILICON GERMANIUM R
Package
SOT-343F
Lifecycle Status
Active
Datasheet
BFU768F115 Datasheet
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Technical Specifications
NXP Semiconductors BFU768F115 RF BJT technical specifications.
General
RoHS
True
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Supply Source
Rochester Electronics
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
2.8V
Noise Figure Db Typ F
1.1dB @ 2.4GHz
Gain
13.1dB
Power Max
220mW
Alternate Parts Comparison (BFU768F115 vs BFU530AR vs BFU550AR vs BFU520XVL)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Description | -- | -- | -- | -- |
| Supply Source | Rochester Electronics | -- | -- | -- |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 150°C (TJ) | -40 °C ~ 150 °C | -40 °C ~ 150 °C | -40°C ~ 150°C (TJ) |
| Gain | 13.1dB | 18 dB | 18 dB | 18dB |
| Number of Pins | -- | 3 | 3 | -- |
| Lifecycle Status | Active | Obsolete | Obsolete | Active |
| China ROHS | -- | Compliant | Compliant | -- |
| Collector Base Voltage Vcbo | -- | 24 V | 24 V | -- |
| Collector Emitter Breakdown Voltage | -- | 12 V | 12 V | -- |
| Collector Emitter Voltage Vceo | -- | 12 V | 16 V | -- |
| Contact Plating | -- | Tin | Tin | -- |
| Action |
More Parts in RF BJT
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