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NXP Semiconductors BFM520,115 RF BJT

BFM520,115 by NXP Semiconductors · RF BJT · 6-TSSOP, SC-88, SOT-363

In StockNXP Semiconductors6-TSSOP, SC-88, SOT-363
BFM520,115 6-TSSOP, SC-88, SOT-363 package illustration

Same model may have multiple batches, images only for reference.

BFM520,115
Manufacturer
Part Number (MPN)
BFM520,115
Package
6-TSSOP, SC-88, SOT-363
Lifecycle Status
Obsolete
Datasheet
PDF BFM520,115 Datasheet
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Technical Specifications

NXP Semiconductors BFM520,115 RF BJT technical specifications.

General

RoHS
ROHS3 Compliant
Number of Pins
6
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Operating Temperature
175°C (TJ)
Lifecycle Status
Obsolete
Automotive
No
Collector Base Voltage Vcbo
20 V
Collector Emitter Breakdown Voltage
8 V
Collector Emitter Voltage Vceo
8 V

Alternate Parts Comparison (BFM520,115 vs BFM505,115 vs BFU520XVL vs BFG325W/XR,115)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSROHS3 CompliantYesYesYes
Lifecycle StatusObsoleteNo Longer ManufacturedActiveNo Longer Manufactured
Package / Case6-TSSOP--TO-253-4, TO-253AASC-82A, SOT-343
Mounting TypeSurface Mount--Surface MountSurface Mount
Operating Temperature175°C (TJ)---40°C ~ 150°C (TJ)175°C (TJ)
Current Collector IC Max70 mA--30mA35mA
Dc Current Gain Hfe Min IC Vce60 @ 20mA, 6V--60 @ 5mA, 8V60 @ 15mA, 3V
Frequency Transition9 GHz--10.5GHz14GHz
Gain15dB--18dB18.3dB
Noise Figure Db Typ F1.2dB ~ 2.1dB @ 900MHz--1.1dB @ 1.8GHz1.1dB @ 2GHz
Power Max1 W--450mW210mW
Transistor Type2 NPN (Dual)--NPNNPN
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