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NXP Semiconductors BF240,112 RF BJT

BF240,112 by NXP Semiconductors · RF BJT · TO-226-3, TO-92-3 (TO-226AA) Formed Leads

In StockNXP SemiconductorsTO-226-3, TO-92-3 (TO-226AA) Formed Leads
BF240,112 TO-226-3, TO-92-3 (TO-226AA) Formed Leads package illustration

Same model may have multiple batches, images only for reference.

BF240,112
Manufacturer
Part Number (MPN)
BF240,112
Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Lifecycle Status
Obsolete
Datasheet
PDF BF240,112 Datasheet
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Technical Specifications

NXP Semiconductors BF240,112 RF BJT technical specifications.

General

Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Power Max
300mW
Transistor Type
NPN
Current Collector IC Max
25mA
Voltage Collector Emitter Breakdown Max
40V
Dc Current Gain Hfe Min IC Vce
67 @ 1mA, 10V
Frequency Transition
150MHz

Alternate Parts Comparison (BF240,112 vs BFU530AR vs BFU550AR vs BFU520XVL)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeThrough HoleSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)-40 °C ~ 150 °C-40 °C ~ 150 °C-40°C ~ 150°C (TJ)
Lifecycle StatusObsoleteObsoleteObsoleteActive
Gain--18 dB18 dB18dB
Isreqsample--YesYesYes
Pack Desc--Reel 7" Q3/T4Reel 7" Q3/T4Reel 11" Q3/T4, LargePack
Pack Type--REELREELREEL
Package--TO-236-3TO-236-3SOT143B
Price Flg--YYY
Requaestitemtype--REQUEST_SAMPLEREQUEST_SAMPLEREQUEST_SAMPLE
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