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NXP Semiconductors A6G25H112WNT2 RF BJT

Source Category: Discrete Semiconductors > Transistors > RF BJT | Import Source: octopart_rf_bjt_html

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A6G25H112WNT2 - No Image Available

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A6G25H112WNT2
Manufacturer
Part Number (MPN)
A6G25H112WNT2
Detailed Description
A6G25H112WNT2 RF Power Transistor, 2.3 to 2.69 GHz, 16 W Avg., 17.5 dB, 48 V, DFN 7 x 10, GaN
Lifecycle Status
Active
Datasheet
PDF A6G25H112WNT2 Datasheet
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Alternate Parts Comparison (A6G25H112WNT2 vs BFU520XVL vs BFG325W/XR,115 vs BFU520AVL)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case--TO-253-4, TO-253AASC-82A, SOT-343TO-236-3, SC-59, SOT-23-3
Mounting Type--Surface MountSurface MountSurface Mount
Operating Temperature---40°C ~ 150°C (TJ)175°C (TJ)-40°C ~ 150°C (TJ)
Base Part Number--BFU520BFG325BFU520
Current Collector IC Max--30mA35mA30mA
Dc Current Gain Hfe Min IC Vce--60 @ 5mA, 8V60 @ 15mA, 3V60 @ 5mA, 8V
Detailed Description--RF Transistor NPN 12V 30mA 10.5GHz 450mW Surface Mount SOT-143BRF Transistor NPN 6V 35mA 14GHz 210mW Surface Mount CMPAK-4RF Transistor NPN 12V 30mA 10GHz 450mW Surface Mount TO-236AB (SOT23)
Frequency Transition--10.5GHz14GHz10GHz
Gain--18dB18.3dB12.5dB
Noise Figure Db Typ F--1.1dB @ 1.8GHz1.1dB @ 2GHz1dB @ 1.8GHz
Other Names--934067706235568-1978-2 934057942115 BFG325W/XR T/R934067697235
Power Max--450mW210mW450mW
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