Nexperia PXN010-30QLJ MOSFETs
PXN010-30QL/SOT8002/MLPAK33
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PXN010-30QLJ
Detailed Description
PXN010-30QL/SOT8002/MLPAK33
Package
PowerVDFN-8
Lifecycle Status
Active
Datasheet
PXN010-30QLJ Datasheet
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Technical Specifications
Nexperia PXN010-30QLJ MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
10.3 A
Rds on Drain Source Resistance
13.6 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (PXN010-30QLJ vs PXN012-60QLJ vs PXP6R1-30QLJ vs BSH205G2AR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Compliant | Yes | Yes |
| Package | PowerVDFN-8 | Tape & Reel (TR) | PowerVDFN-8 | SOT23-3 |
| Mounting Type | SMD/SMT | Surface Mount | -- | -- |
| Operating Temperature | - 55°C ~ + 150°C | -55°C ~ 150°C (TJ) | -- | -- |
| Number of Channels | 1 Channel | 1 Channel | -- | -- |
| Channel Mode | Enhancement | Enhancement | -- | -- |
| Configuration | Single | Single Quad Drain Triple Source | -- | -- |
| Fall Time | 3 ns | 10.9 ns | -- | -- |
| ID Continuous Drain Current | 10.3 A | 42 A | -- | -- |
| Pd Power Dissipation | 4.3 W | 34.7 W | -- | -- |
| Qg Gate Charge | 12.3 nC | 18.77 nC | -- | -- |
| Rds on Drain Source Resistance | 13.6 mOhms | 11.5 mOhms | -- | -- |
| Action |
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