Nexperia PMZB790SN,315 MOSFETs
N-channel enhancement mode MOSFET for small signal applications.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PMZB790SN,315
Base Model
Detailed Description
N-channel enhancement mode MOSFET for small signal applications. Features a 60V drain-source voltage rating and 0.65A continuous drain current. This single-element transistor utilizes TMOS process technology and is housed in a compact 3-pin DFN-B surface-mount package measuring 1 x 0.6 x 0.36mm. Key electrical characteristics include a 3V gate threshold voltage and a maximum drain-source resistance of 940 mOhm at 10V.
Package
DFN-B
Key Features
Package: DFN-B
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PMZB790SN,315 Datasheet
Quick Jump:
Technical Specifications
Nexperia PMZB790SN,315 MOSFETs technical specifications.
General
RoHS
Yes
Number of Pins
3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C
Package
DFN-B
Pcb
3
Package Length Mm
1
Package Width Mm
0.6
Package Height Mm
0.36(Max)
Configuration
Single
Alternate Parts Comparison (PMZB790SN,315 vs PMZB790SN vs PMZB290UNE2YL vs PMZB390UNEYL)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | -- | -- |
| Operating Temperature | -55°C ~ 150°C | -55°C ~ 150°C | -- | -- |
| Number of Pins | 3 | 3 | -- | -- |
| RoHS | Yes | Yes | -- | -- |
| AEC Qualified | No | No | -- | -- |
| Automotive | No | No | -- | -- |
| Cage Code | H2HX9 | H2HX9 | -- | -- |
| Category | Small Signal | Small Signal | -- | -- |
| Channel Mode | Enhancement | Enhancement | -- | -- |
| Channel Type | N | N | -- | -- |
| Configuration | Single | Single | -- | -- |
| Maximum Continuous Drain Current | 0.65A | 0.65A | -- | -- |
| Action |
Nexperia PMZB790SN,315 MOSFETs Overview
N-channel enhancement mode MOSFET for small signal applications. Features a 60V drain-source voltage rating and 0.65A continuous drain current. This single-element transistor utilizes TMOS process technology and is housed in a compact 3-pin DFN-B surface-mount package measuring 1 x 0.6 x 0.36mm. Key electrical characteristics include a 3V gate threshold voltage and a maximum drain-source resistance of 940 mOhm at 10V.
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